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CPC3710C датащи(PDF) 2 Page - Clare, Inc. |
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CPC3710C датащи(HTML) 2 Page - Clare, Inc. |
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2 / 4 page ![]() www.clare.com 2 CPC3710C R00A.8 Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Absolute Maximum Ratings (@ 25˚ C) Electrical Characteristics Parameter Ratings Units Drain-to-Source Voltage 250 V Gate-to-Source Voltage ±20 V Total Package Dissipation 1.61 W Operational Temperature -55 to +125 º C Storage Temperature -55 to +125 º C 1 Mounted on FR4 board 1"x1"x0.062" Package I D (continuous) I D (pulsed) Power Dissipation @TA=25ºC θjcºC/W I DR I DRM SOT-89 220mA 600mA 1.6W1 15 220mA 600mA 1 Mounted on FR4 board 1"x1"x0.062" Thermal Characteristics Parameter Symbol Conditions Min Typ Max Units Drain-to-Source Breakdown Voltage BV DSX V GS= -5V, ID=100µA 250 - - V Gate-to-Source Off Voltage V GS(off) V DS= 10V, ID=1mA -1.6 -2.5 -3.9 V Change in V GS(off) with Temperatures d VGS(off)/dT V DS= 10V, ID=1mA - - 3.3 mV/ºC Gate Body Leakage Current I GSS V GS=±20V, VDS=0V - - 100 nA Drain-to-Source Leakage Current I D(off) V GS= -5V, VDS=Max Rating - - 1 µA V GS= -5V, VDS=0.8 Max Rating TA=125ºC - - 1 mA Saturated Drain-to-Source Current I DSS V GS= 0V, VDS=15V 220 - - mA Static Drain-to-Source ON-State Resistance R DS(on) V GS= 0V, ID=220mA - - 10 Ω Change in RDS(on) with Temperatures dR DS(on)/dT V GS= 0V, ID=220mA - - 0.86 %/ºC Forward Transconductance G FS I D= 100mA, VDS = 10V 225 - - m Input Capacitance C ISS V GS= -5V V DS= 25V f= 1Mhz - 100 350 pF Common Source Output Capacitance C OSS 30 80 Reverse Transfer Capacitance C RSS 15 40 Turn-ON Delay Time t d(on) V DD= 25V I D= 150mA V GS= 0V to -10V R GEN= 50Ω - 23 35 ns Rise Time t r 8 20 Turn-OFF Delay Time t d(off) 17 25 Fall time t f 70 80 Source-Drain Diode Voltage Drop V SD V GS= -5V, ISD= 150mA - 0.6 1.8 V |
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