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DS-CPC3710C-R00A.8

1

CPC3710C

N-Channel Depletion-Mode

Vertical DMOS FETs

Part #

Description

CPC3710C

SOT-89 (100/Tube)

CPC3710CTR

SOT-89 (2000/Reel)

BV

BV

DGX

R

DS(ON)

(max)

I

Package

250V

10Ω

220mA

SOT-89

Applications

Features

Description

Ordering Information

Package Pinout

•

Ignition modules

•

Normally-on switches

•

Solid state relays

•

Converters

•

Telecommunications

•

Power supply

•

Depletion mode device offers low R

temperatures

•

Low on resistance 10 ohms max. at 25ºC

•

High input impedance

•

High breakdown voltage 250V

•

Low V

•

Small package size SOT-89

The CPC3710C is an N-channel depletion mode field

effect transistor (FET) that utilizes Clare’s proprietary

third generation vertical DMOS process. Third

generation process realizes world class, high voltage

MOSFET performance in an economical silicon gate

process. Our vertical DMOS process yields a robust

device for high power applications with high input

impedance. The CPC3710C is a highly reliable FET

device that has been used extensively in Clare’s solid

state relays for industrial and telecommunications

applications.

This device excels in power applications requiring

low drain-source resistance, particularly in cold

environments such as automotive ignition modules.

The CPC3710C offers a low 10 ohm maximum on-

state resistance at 25ºC.

The CPC3710C has a minimum breakdown voltage of

250V and is available in an SOT-89 package. As with

all MOS devices, the FET structure prevents thermal

runaway and thermal-induced secondary breakdown.

(SOT-89)

G

D

S

D

Switching Waveform

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

OUTPUT

D.U.T.

INPUT

INPUT

OUTPUT

0V

0V

-10V

Test Circuit

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

OUTPUT

D.U.T.

INPUT

INPUT

OUTPUT

0V

0V

-10V