BUJD103AD datasheet(6/14 Pages) NXP

6 / 14 page

BUJD103AD_2

Product data sheet

Rev. 02 — 6 October 2009

6 of 14

NXP Semiconductors

BUJD103AD

NPN power transistor with integrated diode

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

ICES

collector-emitter cut-off

current

VBE =0V; VCE = 700 V; Tj = 25 °C

--1

VBE =0V; VCE = 700 V; Tj =125 °C;

[1]

--2

VBE =0V; VCE = 700 V; Tj =25°C;

[1]

--1

VBE =0V; VCE = 700 V; Tj = 100 °C

--5

ICBO

collector-base cut-off

current

VCB =700 V; IE =0A;

[1]

--1

ICEO

collector-emitter cut-off

current

VCE =400 V; IB =0A;

[1]

--0.1

IEBO

emitter-base cut-off

current

VEB =9V; IC = 0 A

--1

VEB =7V; IC = 0 A

--10

VCEOsus

collector-emitter

sustaining voltage

IB =0A; IC =10mA; LC =25mH;

see Figure 7 and 8

400

VCEsat

collector-emitter

saturation voltage

IC =1A; IB = 0.2 A; see Figure 9 and 10

-0.1

0.5

IC =2A; IB = 0.5 A; see Figure 9 and 10

-0.2

0.6

IC =3A; IB = 0.6 A; see Figure 9 and 10

-0.25

IC =4A; IB = 1 A; see Figure 9 and 10

-0.3

VBEsat

base-emitter saturation

voltage

IC =1A; IB = 0.2 A; see Figure 11

0.85

1.2

IC =2A; IB = 0.5 A; see Figure 11

0.92

1.6

IC =3A; IB = 0.6 A; see Figure 11

0.97

1.5

forward voltage

IF = 2 A

1.04

1.5

hFE

DC current gain

IC =1mA; VCE =5V; Tmb =25°C;

see Figure 12

IC =500 mA; VCE =5V; Tj =25 °C;

see Figure 12

IC =1A; VCE =5V; Tmb =25°C;

see Figure 12

IC =2A; VCE =5V; Tmb =25°C;

see Figure 12

IC =3A; VCE =5V; Tmb =25°C;

see Figure 12

12.5

Dynamic characteristics

ton

turn-on time

IC =2.5 A; IBon = 0.5 A; IBoff =-0.5A;

RL =75 Ω; Tj 25 °C; resistive load;

see Figure 13 and 14

0.52

0.6

µs

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