BUJD103AD_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 6 October 2009

5 of 14

NXP Semiconductors

BUJD103AD

NPN power transistor with integrated diode

5.

Thermal characteristics

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to mounting

base

see Figure 5

-

-

1.56

K/W

thermal resistance from

junction to ambient

printed-circuit-board mounted; minimum

footprint; see Figure 6

-75

-

K/W

Fig 5.

Transient thermal impedance from junction to mounting base as a function of pulse width

Fig 6.

Minimum footprint SOT428

001aab998

110

1

10

(K/W)

0.2

0.1

T

t

T

δ =

0.01

0.05

0.02

001aab021

7.0

7.0

4.57

2.5

2.15

1.5