TPC6601 datasheet(3/5 Pages) TOSHIBA

номер детали	TPC6601

подробное описание детали	Transistor Silicon PNP Epitaxial Type

PDF	5 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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3 / 5 page

TPC6601

2006-11-10

Base-emitter voltage VBE (V)

Collector-emitter voltage VCE (V)

IC – VCE

Collector current IC (A)

hFE – IC

Collector current IC (A)

VCE (sat) – IC

Collector current IC (A)

VBE (sat) – IC

IC – VBE

10000

−0.001

1000

100

−0.01

−0.1

−1

−10

= 100°C

−55

Common emitter

VCE = −2 V

Single nonrepetitive

pulse

−0.001

−1

−0.1

−0.01

−0.001

−0.01

−0.1

−1

−10

−55

= 100°C

Common emitter

IC/IB = 30

Single nonrepetitive

pulse

−0.001

−0.01

−0.1

−1

−10

−0.1

−1

Common emitter

IC/IB = 30

Single nonrepetitive

pulse

= 100°C

−55

Common emitter

VCE = −2 V

Single nonrepetitive

pulse

−55

= 100°C

−0.2

−0.4

−0.6

−0.8

−1.0

−1.2

−0.6

−1.2

−1.8

−2.4

−3.0

−0.4

−0.8

−1.2

−1.6

−2.0

−2.4

−0.6

−1.2

−1.8

−3.0

−2.4

Common emitter

= 25°C

Single nonrepetitive

IB = −2 mA

−4

−6

−10

−20

−30

−40

−60

−80

−100

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