TPC6601

2006-11-10

1

TOSHIBA Transistor Silicon PNP Epitaxial Type

TPC6601

High-Speed Switching Applications

DC-DC Converter Applications

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Characteristics

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

−50

V

Emitter-base voltage

−7

V

DC

−2.0

Collector current

Pulse

−3.5

A

Base current

−0.2

A

DC

0.8

Collector power

dissipation

t

= 10 s

(Note 1)

1.6

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu

area: 645 mm

Note 2: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3T1A

Weight: 0.011 g (typ.)