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ST2302MSRG датащи(PDF) 3 Page - Stanson Technology

номер детали ST2302MSRG
подробное описание детали  N Channel Enhancement Mode MOSFET
PDF  6 Pages
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производитель  STANSON [Stanson Technology]
домашняя страница  http://www.stansontech.com
Logo STANSON - Stanson Technology

ST2302MSRG датащи(HTML) 3 Page - Stanson Technology

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ST2302M
N Channel Enhancement Mode MOSFET
3.6A
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2302M 2007. V1
3
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ
Max
Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=250uA
20
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250uA
0.5
1.2
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
±
100
nA
VDS=20V,VGS=0V
1
Zero Gate Voltage Drain
Current
IDSS
VDS=20V,VGS=0V
TJ=55℃
10
uA
On-State Drain Current
ID(on)
VDS≧5V,VGS=4.5V
VDS≧5V,VGS=2.5V
6
4
A
Drain-source On-Resistance
RDS(on)
VGS=4.5V,ID=3.6A
VGS=2.5V,ID=3.1A
0.09
0.13
Ω
Forward Transconductance
gfs
VDS=5V,ID=3.6V
10
S
Diode Forward Voltage
VSD
IS=1.6A,VGS=0V
0.85
1.2
V
Dynamic
Total Gate Charge
Qg
5.4
10
Gate-Source Charge
Qgs
0.65
Gate-Drain Charge
Qgd
VDS=10V
VGS=4.5V
ID≣3.6A
1.4
nC
Input Capacitance
Ciss
340
Output Capacitance
Coss
115
Reverse Transfer
Capacitance
Crss
VDS=10V
VGS=0V
F=1MHz
33
pF
12
25
Turn-On Time
td(on)
tr
36
60
34
60
Turn-Off Time
td(off)
tf
VDD=10V
RL=5.5Ω
ID=3.6A
VGEN=4.5V
RG=6Ω
10
25
nS



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