ST2302M

N Channel Enhancement Mode MOSFET

3.6A

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST2302M 2007. V1

1

DESCRIPTION

The ST2302M is the N-Channel logic enhancement mode power field effect transistor

are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone

and notebook computer power management and other batter powered circuits, and

low in-line power loss are needed in a very small outine surface mount package.

PIN CONFIGURATION

SOT-23

1.Gate

2.Source

3.Drain

PART MARKING

SOT-23

Y: Year Code

A: Process Code

ORDERING INFORMATION

Part Number

Package

Part Marking

ST2302MSRG

SOT-23

S02YA

※

Process Code : A ~ Z ; a ~ z

※

ST2302MSRG

S : SOT-23 ; R : Tape Reel ; G : Pb – Free

FEATURE

@VGS = 4.5V

@VGS = 2.5V

Super high density cell design for

Exceptional on-resistance and maximum

DC current capability

SOT-23 package design

3

1

2

D

G

S

3

1

2

S02YA