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MAALSS0025SMB датащи(PDF) 2 Page - M/A-COM Technology Solutions, Inc. |
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MAALSS0025SMB датащи(HTML) 2 Page - M/A-COM Technology Solutions, Inc. |
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2 / 4 page ![]() • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 2 High Dynamic Range Low Noise Amplifier 400 - 500 MHz Rev. V1 MAALSS0025 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Electrical Specifications: TA = +25°C, Z0 = 50 Ω, F = 450 MHz, Pin = -30 dBm Parameter Test Conditions Units Min Typ Max Gain 5 V, 60 mA 6 dB 19 21 24 Noise Figure 5 V, 60 mA 6 dB — 0.9 1.4 Input Return Loss — dB — 9 — Output Return Loss — dB — 11 — Output 1 dB Compression 5 V, 60 mA 3 dBm — 16.5 — Output IP3 5 V, 60 mA 3 dBm — 28 — Input IP3 5 V, 60 mA 3 dBm 3 7 — Reverse Isolation — dB — 34 — 6. Using external 15-ohm resistor. See functional schematic. External Circuitry Parts List Part Value Purpose C1 100 pF DC Block C2 8 pF Input Matching C3 470 pF Bypass C4 4 pF Output Matching L1 22 nH Input Matching L2 43 nH Input Matching L3 12 nH RF Choke L4 11 nH Output Matching R1 15 Ohms Optional current control 7 (see note 6) 7. Pin 2 allows use of an external resistor to ground for optional, higher current. For 20 mA operation, no resistor is used. For IDD ~ 40 mA, R2 = 43 ohms; IDD ~ 60 mA, R2 = 15 ohms; IDD ~ 80 mA, R2 = 10 ohms. Functional Schematic IN C1 OUT L1 C2 L2 R1 (See note 6) L3 VDD C3 L4 C4 3 2 7 6 1,4,5,8 Handling Procedures The following precautions should be observed to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. |
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