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SP7656EN2-L/TR датащи(PDF) 2 Page - Exar Corporation |
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SP7656EN2-L/TR датащи(HTML) 2 Page - Exar Corporation |
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2 / 10 page ![]() 11/07/08 SP7656 PowerBlox Copyright 2008 EXAR Corporation 2 ABSOLUTE MAXIMUM RATINGS These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. PVIN….............................................................. -0.3V to 30V SVIN…………………………………………..….. -0.3V to 30V Lx………………………… .……………………….…-2V to 30V ISET…………………………… .……………………-2V to 30V FB…………….............................. ....................-0.3V to 5.5V Storage Temperature..…… .……………..…-65 C to 150 C Junction Temperature..................................-40C to 125C Lead Temperature (Soldering, 10 sec)......…………..300 C ELECTRICAL SPECIFICATIONS Specifications are for TAMB=TJ=25C, and those denoted by ♦ apply over the full operating range, -40C< Tj <85C. Unless otherwise specified: VIN =4.5V to 29V, CIN = 4.7F. PARAMETER MIN TYP MAX UNITS ♦ CONDITIONS UVLO Turn-On Threshold 4.2 4.35 4.5 V 0C< Tj <85C UVLO Turn-Off Threshold 4.0 4.15 4.3 V 0C< Tj <85C UVLO Hysteresis 0.2 V Operating Input Voltage Range 4.5 29 V 0C< Tj <85C Operating Input Voltage Range 7 29 V ♦ Operating VCC Current 0.3 3 mA VFB=1.2V Reference Voltage Accuracy 0.5 % Reference Voltage Accuracy 0.5 2 % ♦ Reference Voltage 0.6 V Reference Voltage 0.588 0.6 0.612 V ♦ Switching Frequency 510 600 690 kHz Minimum ON-Pulse Duration 40 100 ns ♦ Minimum Duty Cycle 0 % Maximum Duty Cycle 100 % *See Duty Cycle restriction- applications section SVIN - VDR voltage difference 4.5 5.5 V ♦ Measure SVIN – VDR, SVIN>7V Overcurrent Threshold 270 300 330 mV Measure SVIN - ISET ISET pin Input Current 25 30 35 µA VISET = SVIN OFF interval during hiccup 100 ms Soft start time 3 5 9 ms VFB=0.58V, measure between VIN=4.5V and first GATE pulse SHDN Threshold 0.8 1.0 1.2 V ♦ Apply voltage to FB SHDN Threshold Hysteresis 100 mV P-Channel FET ON Resistance 60 mΩ P-Channel FET Source leakage 3 5 µA |
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