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AS4LC4M16DG-5S/XT датащи(PDF) 8 Page - Austin Semiconductor

номер детали AS4LC4M16DG-5S/XT
подробное описание детали  4 MEG x 16 DRAM Extended Data Out (EDO) DRAM
PDF  25 Pages
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производитель  AUSTIN [Austin Semiconductor]
домашняя страница  http://www.austinsemiconductor.com
Logo AUSTIN - Austin Semiconductor

AS4LC4M16DG-5S/XT датащи(HTML) 8 Page - Austin Semiconductor

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DRAM
DRAM
DRAM
DRAM
DRAM
AS4LC4M16
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.
8
AS4LC4M16
Rev. 1.1 6/05
Austin Semiconductor, Inc.
I
CC OPERATING CONDITIONS AND MAXIMUM LIMITS
1,2,3,5,6
(V
CC = +3.3V ±0.3V)
-5
-6
PARAMETERS
SYM
MAX
MAX
UNITS
NOTES
STANDBY CURRENT: TTL
RAS\ = CAS\ = VIH
ICC1
1.5
1.5
mA
STANDBY CURRENT: CMOS
(RAS\ = CAS\ > VCC - 0.2V; DQs may be left open;
Other inputs: VIN > VCC - 0.2V or VIN < 0.2V)
ICC2
11
mA
OPERATING CURRENT: Random READ/WRITE
Average power supply current
(RAS\, CAS\, address cycling: tRC = tRC [MIN])
ICC3
165
150
mA
26
OPERATING CURRENT: EDO PAGE MODE
Average power supply current
(RAS\ = VIL, CAS\, address cycling: tPC = tPC [MIN])
ICC4
125
120
mA
26
REFRESH CURRENT: RAS\-ONLY
Average power supply current
(RAS\ cycling, CAS\ = VIH: tRC = tRC [MIN])
ICC5
165
150
mA
22
REFRESH CURRENT: CBR
Average power supply current
(RAS\, CAS\, address cycling: tRC = tRC [MIN])
ICC6
165
150
mA
4, 7, 23
REFRESH CURRENT: Extended ("S" version only)
Average power supply current: CAS\ = 0.2V or CBR cycling;
RAS\ = tRAS (MIN); WE\ = VCC - 0.2V; A0 - A10, OE\ and
DIN = VCC - 0.2V or 0.2V (DIN may be left open); tRC = 125µS
ICC7
11
mA
4, 7,
23, 37
REFRESH CURRENT: Self ("S" version only)
Average power supply current: CBR with RAS\ > tRASS (MIN)
and CAS\ held LOW; WE\ = VCC - 0.2V; A0 - A10, OE\ and
DIN = VCC - 0.2V or 0.2V (DIN may be left open)
ICC8
1
1
mA
4, 7, 37



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