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SSD01L60 датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

номер детали SSD01L60
подробное описание детали  N-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
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производитель  SECOS [SeCoS Halbleitertechnologie GmbH]
домашняя страница  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSD01L60 датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Electrical Characteristics( Tj=25 C Unless otherwise specified)
o
4
1
1.1
6.6
5
11.7
9.2
170
30.7
5.1
nC
nS
pF
VGS=0V
VDS=25V
f=1.0MHz
VDD=300V
ID=1 A
VGS=10V
RG=3.3
RD=300
Ω
Ω
ID=1 A
VDS=480V
VGS= 10V
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
12
0.8
Ω
VGS=10V, ID=0.5A
_
S
VDS=10V, ID=0.5A
_
_
Total Gate Charge
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-Source On-Resistance
Forward Transconductance
Gfs
3
3
RDS(ON)
600
0.8
2.0
4.0
100
10
100
±
V
V/
Reference to 25C, ID=1mA
o
oC
V
nA
uA
uA
VGS=0V, ID=250uA
VGS= 30V
±
VDS=600V,VGS=0
VDS=480 V,VGS=0
VDS=VGS, ID=250uA
_
_
_
_
_
_
_
_
_
_
_
BVDSS
BVDS/ Tj
IDSS
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current(Tj=150 )
VGS(th)
IGSS
oC
oC
_
_
3
_
Elektronische Bauelemente
SSD01L60
1A, 600V,RDS(ON)12
N-Channel Enhancement Mode Power Mos.FET
Ω
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
Source-Drain Diode
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
Continuous Source Current(Body Diode)
IS
_
=1.2 V
1
5
=1A
1.2
Pulsed Source Current(Body Diode)
_
ISM
A
A
VD=VG=0V,VS
VSD
_
_
IS
, VGS=0V.Tj=25C
V
o
1
_
_
3
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 : , VDD=50V, L=10mH, RG=25 Ł , IAS=1.0A.
3. Pulse width 300us, duty cycle 2%.



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