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LTC4218IGN датащи(PDF) 13 Page - Linear Technology

номер детали LTC4218IGN
подробное описание детали  Hot Swap Controller
PDF  16 Pages
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производитель  LINER [Linear Technology]
домашняя страница  http://www.linear.com
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LTC4218IGN датащи(HTML) 13 Page - Linear Technology

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LTC4218
13
4218fb
APPLICATIONS INFORMATION
In this same figure the OV threshold is lowered from
15.05V to 13.5V. Decreasing the OV threshold requires
adding a resistor between VDD and OV. This resistor can
be calculated as follows:
R
RV
V
VV
VV
SHUNT
IN
OLD
TH
NEW
OV TH
OLD
2 =
()
()
()
()
NNEW
k
()
⎜⎜
⎟⎟
=
()
18
15 05
1 235
13 5 1 235
•.
.
.–.
1
15 05 13 5
1 736
.–.
.
()
⎝⎜
⎠⎟
=
M
Use the equation for RSHUNT1 for increasing the OV and
FB thresholds. Likewise, use the equation for RSHUNT2 for
decreasing the UV and FB thresholds.
Design Example
Consider the following design example (Figure 5): VIN =
12V, IMAX = 7.5A. IINRUSH = 1A, CL = 330μF, VUVON = 9.88V,
VOVOFF = 15.05V, VPWRGD = 10.5V. A current limit fault
triggers an automatic restart of the power up sequence.
The selection of the sense resistor, (RS), is set by the
overcurrent threshold of 15mV:
RS = 15mV/IMAX = 15mV/7.5A = 0.002Ω
The MOSFET should be sized to handle the power dissi-
pation during the inrush charging of the output capacitor
COUT. The method used to determine the power in Q1 is
the principal:
EC = Energy in CL = Energy in Q1
Thus:
EC = ½ CV2 = ½ (330μF)(12)2 = 0.048J
Calculate the time it takes to charge up COUT:
t
CV
I
µF
V
A
ms
CHARGUP
LIN
INRUSH
==
=
330
12
1
4
The inrush current is set to 1A using CGATE:
CC
I
I
µF
µA
A
µF
GATE
L
GATE UP
INRUSH
==
()
.
330
24
1
001
The average power dissipated in the MOSFET:
PDISS = EC/tCHARGUP = 0.048J/4ms = 12W
The SOA (safe operating area) curves of candidate MOSFETs
must be evaluated to ensure that the heat capacity of the
package can stand 12W for 4ms. The SOA curves of the
Vishay Siliconix Si7108DN provide 1.5A at 10V (15W) for
100ms, satisfying the requirement.
Next,thepowerdissipatedintheMOSFETduringovercurrent
must be limited. The active current limit uses a timer to
prevent excessive energy dissipation in the MOSFET. The
worst-case power occurs when the voltage versus current
profile of the foldback current limit is at the maximum. This
occurs when the current is 6A and the voltage is one half
of 12V or (6V). See the Current Limit Sense Voltage vs
FB Voltage in the Typical Performance curves to view this
profile. In order to survive 36W, the MOSFET SOA dictates
a maximum time at this power level. The Si7108DN allows
60W for 10ms or less. Therefore, it is acceptable to set the
current limit timeout using CT to be 1.2ms:
CT = 1.2ms/12[ms/μF] = 0.1μF
12V
CT
0.1
μF
ADC
C1
0.1
μF
R3
20k
4218 F05
R2
10k
CL
330
μF
SENSE
GATE
SENSE+
VDD
UV
SOURCE
PG
GND
IMON
LTC4218DHC-12
INTVCC
TIMER
FLT
R1
10
Ω
RS
2m
Ω
Q1
Si7108DN
12V
+
VOUT
12V
6A
RGATE
1k
CGATE
0.01
μF
Figure 5. 6A, 12V Card Resident Application
Figure 4. Adjusting LTC4218-12 Thresholds
4218 F04
LTC4218-12
RSHUNT1
RSHUNT2
VDD
OV
UV



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