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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BDX78F датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDX78F датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BDX78F DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min) ·Complement to Type BDX77F APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak s -12 A IB B Base Current -3 A PC Collector Power Dissipation @ TC=25℃ 32 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 6.3 ℃/W isc Website：www.iscsemi.cn |
Аналогичный номер детали - BDX78F |
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Аналогичное описание - BDX78F |
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