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BDX78F датащи(PDF) 2 Page - Inchange Semiconductor Company Limited

номер детали BDX78F
подробное описание детали  isc Silicon PNP Power Transistor
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDX78F датащи(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BDX78F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -0.2A ;IB= 0
B
-80
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= -1mA ;IE= 0
-100
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -1mA ;IC= 0
-5
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -3A; IB= -0.3A
B
-1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -6A; IB= -0.6A
B
-1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -6A; IB= -0.6A
B
-2.0
V
VBE(on)
Base-Emitter On Voltage
IC= -3A ; VCE= -2V
-1.5
V
ICEO
Collector Cutoff Current
VCE= 40V; IB= 0
B
-0.2
mA
ICBO
Collector Cutoff Current
VCB= VCBO;IE= 0
VCB=
1/
2VCBO;IE= 0; T
J= 150℃
-0.1
-1.0
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-0.5
mA
hFE
DC Current Gain
IC= -2A ; VCE= -2V
30
fT
Current-Gain—Bandwidth Product
IC= -0.3A ; VCE= -3V, ftest= 1.0MHz
7.0
MHz
Switching Times
ton
Turn-On Time
1
μs
toff
Turn-Off Time
IC= -2A; IB1= -IB2= -0.2A
2
μs
isc Website：www.iscsemi.cn
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