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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BUH313D датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUH313D датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUH313D DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Integrated Diode APPLICATIONS ·Horizontal deflection stage in standard and high resolution Displays for TV’s and monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB B Base Current 3 A IBM Base Current-Peak 5 A PC Collector Power Dissipation @TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W isc Website：www.iscsemi.cn |
Аналогичный номер детали - BUH313D |
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Аналогичное описание - BUH313D |
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ссылки URL |
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