MJ13090 datasheet(1/2 Pages) ISC

номер детали	MJ13090

подробное описание детали	isc Silicon NPN Power Transistors

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

MJ13090/13091

DESCRIPTION

· Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 400V(Min)—MJ13090

= 450V(Min)—MJ13091

·High Switching Speed

APPLICATIONS

·Designed for high-voltage ,high-speed, power switching in

inductive circuits where fall time is critical. They are partic-

ularly suited for line operated switch-mode applications.

Typical applications:

·Switching regulators

·Inverters

·Solenoid and relay drivers

·Motor controls

·Deflection circuits

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

MJ13090

650

VCEV

Collector-Emitter Voltage

MJ13091

750

V

MJ13090

400

VCEO(SUS)

Collector-Emitter Voltage

MJ13091

450

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

15

A

ICM

Collector Current-Peak

20

A

IB

B

Base Current-Continuous

5

A

IBM

Base Current-Peak

10

A

PC

Collector Power Dissipation@TC=25℃

175

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.0

℃/W

isc Website：www.iscsemi.cn

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