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MJ13090 датащи(PDF) 2 Page - Inchange Semiconductor Company Limited

номер детали MJ13090
подробное описание детали  isc Silicon NPN Power Transistors
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJ13090 датащи(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
MJ13090/13091
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
MJ13090
400
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
MJ13091
IC=100mA ; IB=0
450
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 10A; IB= 2A
IC= 10A; IB= 2A;TC=100℃
1.0
2.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 15A; IB= 3A
3.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 10A; IB= 2A
IC= 10A; IB= 2A;TC=100℃
1.5
1.5
V
MJ13090
VCEV=650V;VBE(off)=1.5V
VCEV=650V;VBE(off)=1.5V;TC=100℃
0.5
2.5
ICEV
Collector
Cutoff Current
MJ13091
VCEV=750V;VBE(off)=1.5V
VCEV=750V;VBE(off)=1.5V;TC=100℃
0.5
2.5
mA
MJ13090
VCE= 650V; RBE= 50Ω,TC= 100℃
3.0
ICER
Collector
Cutoff Current
MJ13091
VCE= 750V; RBE= 50Ω,TC= 100℃
3.0
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
1.0
mA
hFE
DC Current Gain
IC= 10A ; VCE= 3V
8
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1.0kHz
350
pF
Switching times;Resistive Load
td
Delay Time
30
50
ns
tr
Rise Time
130
500
ns
ts
Storage Time
550
2500
ns
tf
Fall Time
IC= 10A , VCC= 250V;
IB1= 1.25A;tp= 30μs; VBE(off)= 5V
Duty Cycle≤2.0%
100
500
ns
isc Website：www.iscsemi.cn
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