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TCM680 датащи(PDF) 4 Page - TelCom Semiconductor, Inc

номер детали TCM680
подробное описание детали  5V TO 짹10V VOLTAGE CONVERTER
PDF  7 Pages
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производитель  TELCOM [TelCom Semiconductor, Inc]
домашняя страница  http://www.telcom-semi.com
Logo TELCOM - TelCom Semiconductor, Inc

TCM680 датащи(HTML) 4 Page - TelCom Semiconductor, Inc

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TELCOM SEMICONDUCTOR, INC.
TCM680
+5V TO
±10V VOLTAGE CONVERTER
EFFICIENCY CONSIDERATIONS
Theoretically a charge pump can approach 100% effi-
ciency under the following conditions:
• The charge Pump switches have virtually no offset
and extremely low on resistance
• Minimal power is consumed by the drive circuitry
• The impedances of the reservoir and pump capaci-
tors are negligible
For the TCM680, efficiency is as shown below:
Efficiency V
+ = V
DD /(2VIN)
VDD = 2VIN – V
+
DROP
V
+
DROP = (I
+
OUT)(R
+
OUT)
Efficiency V
– = V
SS /(– 2VIN)
VSS = 2VIN – V
–
DROP
V
–
DROP = (I
–
OUT)(R
–
OUT)
Power Loss =(V
+
DROP)(I
+
OUT) + (V
–
DROP)(I
–
OUT)
There will be a substantial voltage difference between
(V
+
OUT – VIN) and VIN for the positive pump and between
V
+
OUT and V –
OUT if the impedances of the pump capacitors C1
and C2 are high with respect to the output loads.
Larger values of reservoir capacitors C3 and C4 will
reduce output ripple. Larger values of both pump and
reservoir capacitors improve the efficiency. See "Capacitor
Selection" in Applications Section.
APPLICATIONS
Positive and negative Converter
The most common application of the TCM680 is as a
dual charge pump voltage converter which provides positive
and negative outputs of two times a positive input voltage.
The simple circuit of Figure 6 performs this same function
using the TCM680 and external capacitors, C1, C2, C3 and C4.
Figure 6. Positive and Negative Converter
C1
C1
C2
C3
C2
V
IN
V
IN
VOUT
VOUT
VOUT
GND
GND
TCM680
22
µF
22
µF
22
µF
C4
22
µF
8
7
6
5
4
3
2
1
VOUT
C2
C1
+
+
–
+
–
–
+
–
Capacitor Selection
The TCM680 requires only 4 external capacitors for
operation. These can be inexpensive polarized aluminum
electrolytic types. For the circuit in Figure 6 the output
characteristics are largely determined by the external
capacitors. An expression for ROUT can be derived as shown
below:
R
+
OUT = 4(RSW1 + RSW2 + ESRC1 + RSW3 + RSW4 + ESRC2)
+4(RSW1 + RSW2 + ESRC1 + RSW3 + RSW4 + ESRC2)
+1/(fPUMP x C1) + 1/(fPUMP x C2) + ESRC4
R
–
OUT = 4(RSW1 + RSW2 + ESRC1 + RSW3 + RSW4 + ESRC2)
+4(RSW1 + RSW2 + ESRC1 + RSW3 + RSW4+ ESRC2)
+1/(fPUMP x C1) + 1/(fPUMP x C2) + ESRC3
Assuming all switch resistances are approximately
equal...
R
+
OUT = 32RSW + 8ESRC1 + 8ESRC2 + ESRC4
+1/(fPUMP x C1) + 1/(fPUMP x C2)
R
–
OUT = 32RSW + 8ESRC1 + 8ESRC2 + ESRC3
+1/(fPUMP x C1) + 1/(fPUMP x C2)
ROUT is typically 140Ω at +25°C with VIN = +5V and C1
and C2 as 4.7
µF low ESR capacitors. The fixed term
(32RSW) is about 130Ω. It can be seen easily that increasing
or decreasing values of C1 and C2 will affect efficiency by
changing ROUT. However, be careful about ESR. This term
can quickly become dominant with large electrolytic capaci-
tors. Table 1 shows ROUT for various values of C1 and C2
(assume 0.5
Ω ESR). C1 and C4 must be rated at 6VDC or
greater while C2 and C3 must be rated at 12VDC or greater.
Output voltage ripple is affected by C3 and C4. Typically
the larger the value of C3 and C4 the less the ripple for a
given load current. The formula for VRIPPLE(p-p) is given
below:
V+RIPPLE(p-p) = {1/[2(fPUMP /3) x C4] + 2(ESRC4)}(I
+
OUT)
V–RIPPLE(p-p) = {1/[2(fPUMP /3) x C3] + 2(ESRC3)}(I
–
OUT)
For a 10
µF (0.5Ω ESR) capacitor for C3, C4,
fPUMP = 21kHz and IOUT = 10mA the peak-to-peak ripple
voltage at the output will be less than 100mV. In most
applications (IOUT < = 10mA) 10-20µF output capacitors and
1-5
µF pump capacitors will suffice. Table 2 shows VRIPPLE
for different values of C3 and C4 (assume 1
Ω ESR).



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