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TC4467CPD датащи(PDF) 5 Page - TelCom Semiconductor, Inc

номер детали TC4467CPD
подробное описание детали  LOGIC-INPUT CMOS QUAD DRIVERS
PDF  9 Pages
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производитель  TELCOM [TelCom Semiconductor, Inc]
домашняя страница  http://www.telcom-semi.com
Logo TELCOM - TelCom Semiconductor, Inc

TC4467CPD датащи(HTML) 5 Page - TelCom Semiconductor, Inc

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TELCOM SEMICONDUCTOR, INC.
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LOGIC-INPUT CMOS
QUAD DRIVERS
TC4467
TC4468
TC4469
Maximum operating temperature:
TJ – θJA (PD) = 141°C,
where: TJ = Maximum allowable junction temperature
(+150
°C)
θJA = Junction-to-ambient thermal resistance
(83.3
°C/W) 14-pin plastic package.
NOTE:
Ambient operating temperature should not exceed +85
°C for
"EJD" device or +125
°C for "MJD" device.
Figure 1. Switching Time Test Circuit
VOUT
1B
1A
2B
2A
3B
3A
4B
4A
1 µF FILM
0.1 µF CERAMIC
VDD
470 pF
90%
10%
10%
10%
tD1
tR
tD2
tF
90%
+5V
INPUT
(A, B)
VDD
OUTPUT
0V
0V
90%
1
2
3
4
5
6
8
9
7
10
11
12
13
14
Input: 100 kHz, square wave,
tRISE = tFALL
≤ 10nsec
Transition power dissipation arises in the
complementary configuration (TC446X) because the
output stage N-channel and P-channel MOS transistors
are ON simultaneously for a very short period when the
output changes. The transition power dissipation is
approximately:
PT = f VS (10
10
–9).
Package power dissipation is the sum of load, quies-
cent and transition power dissipations. An example shows
the relative magnitude for each term:
C = 1000 pF capacitive load
VS = 15V
D = 50%
f
= 200 kHz
PD = Package Power Dissipation = PL + PQ + PT
= 45 mW + 35 mW + 30 mW = 110 mW.



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