BAS32L datasheet(1/10 Pages) NXP

номер детали	BAS32L

подробное описание детали	High-speed switching diode

PDF	10 Pages

Scroll/Zoom	100%

производитель	NXP [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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1 / 10 page

1.

Product proﬁle

1.1 General description

Single high-speed switching diode, fabricated in planar technology, and encapsulated in a

small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.

1.2 Features

I High switching speed: trr ≤ 4ns

I Reverse voltage: VR ≤ 75 V

I Repetitive peak reverse voltage: VRRM ≤ 100 V

I Repetitive peak forward current: IFRM ≤ 450 mA

I Small hermetically sealed glass SMD package

1.3 Applications

I High-speed switching

I Reverse polarity protection

1.4 Quick reference data

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.

BAS32L

High-speed switching diode

Rev. 06 — 29 October 2008

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF

forward current

[1] -

-

200

mA

IFRM

repetitive peak forward

current

-

450

mA

VR

reverse voltage

-

75

V

VF

forward voltage

IF = 100 mA

-

1000

mV

trr

reverse recovery time

[2] --4

ns

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