BAS32L datasheet(3/10 Pages) NXP

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BAS32L_6

Product data sheet

Rev. 06 — 29 October 2008

3 of 10

NXP Semiconductors

BAS32L

High-speed switching diode

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Tj =25 °C prior to surge.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Characteristics

[1]

When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.

[2]

When switched from IF = 50 mA; tr =20ns.

junction temperature

200

°C

Tamb

ambient temperature

−65

+200

°C

Tstg

storage temperature

−65

+200

°C

Table 5.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

350

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

300

K/W

Table 7.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

IF = 5 mA

620

750

IF = 100 mA

1000

IF = 100 mA; Tj = 100 °C

930

reverse current

VR = 20 V

--25

VR = 75 V

--5

µA

VR = 20 V; Tj = 150 °C

--50

µA

VR = 75 V; Tj = 150 °C

100

µA

diode capacitance

VR = 0 V; f = 1 MHz

trr

reverse recovery

time

[1] --4

VFR

forward recovery

voltage

[2] -

2.5

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