ADF9010BCPZ datasheet(7/28 Pages) AD

7 / 28 page

ADF9010

Rev. 0 | Page 7 of 28

ABSOLUTE MAXIMUM RATINGS

TA = 25°C unless otherwise noted.

Table 5.

Parameter

Rating

DVDD, RxVDD , AVDD to GND1

−0.3 V to +3.9 V

RxVDD, AVDD to DVDD

−0.3 V to +0.3 V

VP to GND1

−0.3 V to +5.5 V

Digital I/O Voltage to GND1

−0.3 V to VDD + 0.3 V

Analog I/O Voltage to GND1

−0.3 V to AVDD + 0.3 V

Charge Pump Voltage to GND1

−0.3 V to VP to GND1

REFIN, LOEXTP, LOEXTN to GND1

−0.3 V to VDD + 0.3 V

LOEXTP to LOEXTN

±320 mV

Operating Temperature Range

Industrial (B Version)

−40°C to +85°C

Storage Temperature Range

−65°C to +150°C

Maximum Junction Temperature

150°C

LCSP θJA Thermal Impedance

26°C/W

Reflow Soldering

Peak Temperature

260°C/W

Time at Peak Temperature

40 sec

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

This device is a high-performance RF integrated circuit with an

ESD rating of <0.5 kV and is ESD sensitive. Proper precautions

should be taken for handling and assembly.

TRANSISTOR COUNT

The ADF9010 transistor count is 40,454 (CMOS) and 994

(bipolar).

ESD CAUTION

1 GND = AGND = DGND = 0 V.

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