TSDF1920W datasheet(3/5 Pages) VISHAY

номер детали	TSDF1920W

подробное описание детали	25 GHz Silicon NPN Planar RF Transistor

PDF	5 Pages

Scroll/Zoom	100%

производитель	VISHAY [Vishay Siliconix]

домашняя страница	http://www.vishay.com

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TSDF1920W

Document Number 85092

Rev. 1.4, 05-Sep-08

Vishay Semiconductors

www.vishay.com

Electrical AC Characteristics

Tamb = 25 °C, unless otherwise specified

Package Dimensions in mm

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Transition frequency

VCE = 2 V, IC = 25 mA, f = 1 GHz

GHz

Collector-base capacitance

VCB = 2 V, f = 1 MHz

Ccb

0.15

0.3

Collector-emitter capacitance

VCE = 2 V, f = 1 MHz

Cce

0.4

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

0.6

Noise figure

VCE = 2 V, IC = 5 mA, ZS = ZSopt,

ZL = ZLopt, f = 2 GHz

F1.2

Power gain, maximum stable

gain

VCE = 2 V, IC = 25 mA,

ZS = ZSopt, ZL = ZLopt,

f = 2 GHz

Gpe = Gms =

| S21e/S12e |

Transducer gain

VCE = 2 V, IC = 25 mA,

ZS = ZL= 50 Ω, f = 2 GHz

| S21e |

13.5

16.4

Third order intercept point at

output

VCE = 2 V, IC = 25 mA,

ZS = ZL= 50 Ω, f = 2 GHz

IP3

dBm

1 dB compression point

VCE = 2 V, IC = 25 mA,

ZS = ZL= 50 Ω, f = 2 GHz

P-1dB

dBm

96 12238

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