TSDF1920W

Document Number 85092

Rev. 1.4, 05-Sep-08

Vishay Semiconductors

www.vishay.com

1

16712

2

1

3

4

Electrostatic sensitive device.

Observe precautions for handling.

Not for new design, this product will be obsoleted soon

25 GHz Silicon NPN Planar RF Transistor

Features

• Very low noise figure

• Very high power gain

• Low feedback capacitance

• Emitter pins are thermal leads

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Applications

For RF front-ends, low noise, and wideband applica-

tions, such as in analogue and digital cellular and

cordless phones

(DECT, PHD), in TV systems (e.g. satellite tuners), in

high frequency oscillators up to 12 GHz, in pagers

and radar detectors.

Mechanical Data

Case: SOT-343R Plastic case

Weight: approx. 6.0 mg

Pinning: 1 = Emitter, 2 = Base,

3 = Emitter, 4 = Collector

Parts Table

Absolute Maximum Ratings

Maximum Thermal Resistance

μm Cu

Part

Marking

Package

TSDF1920W

YH3

SOT-343R

Parameter

Test condition

Symbol

Value

Unit

Collector-base voltage

10

V

Collector-emitter voltage

3.5

V

Emitter-base voltage

1.5

V

Collector current

40

mA

Total power dissipation

200

mW

Junction temperature

150

°C

Storage temperature range

- 65 to + 150

°C

Parameter

Test condition

Symbol

Value

Unit

Junction ambient

1)

450

K/W

e3