RMB2S & RMB4S

Vishay General Semiconductor

www.vishay.com

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88705

Revision: 01-Feb-08

2

Notes:

(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads

(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad

RATINGS AND CHARACTERISTICS CURVES

PARAMETER

TEST CONDITIONS

SYMBOL

RMB2S

RMB4S

UNIT

Maximum instantaneous forward voltage

drop per diode

0.4 A

1.25

V

Maximum DC reverse current at rated DC

blocking voltage per diode

5.0

100

µA

Maximum reverse recovery time per diode

150

ns

Typical junction capacitance per diode

4.0 V, 1 MHz

13

pF

PARAMETER

SYMBOL

RMB2S

RMB4S

UNIT

Typical thermal resistance

°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

RMB4S-E3/45

0.22

45

100

Tube

RMB4S-E3/80

0.22

80

3000

13" diameter paper tape and reel

Figure 1. Maximum Forward Current Derating Curve

0

20

40

60

80

100

120

140

160

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

Aluminum Substrate

Glass Epoxy P.C.B.

Ambient Temperature (°C)

Resistive or Inductive Load

Figure 2. Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

1

10

100

0

5

10

15

20

25

30

35

f = 60 Hz

f = 50 Hz

T

Single Half Sine-Wave

Number of Cycles

1.0 Cycle