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RMB2S датащи(PDF) 1 Page - Vishay Siliconix |
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RMB2S датащи(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() RMB2S & RMB4S Vishay General Semiconductor Document Number: 88705 Revision: 01-Feb-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier FEATURES • UL recognition, file number E54214 • Saves space on printed circuit boards • Ideal for automated placement • Fast recovery, low switching loss • High surge current capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 250 °C • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectification for power supply, lighting ballaster, battery charger, home appliances, office equipment, and telecommunication applications. MECHANICAL DATA Case: TO-269AA (MBS) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for commercial grade, meets JESD 201 class 1A whisker test Polarity: As marked on body PRIMARY CHARACTERISTICS IF(AV) 0.5 A VRRM 200 V, 400 V IFSM 30 A trr 150 ns VF 1.25 V TJ max. 150 °C TO-269AA (MBS) ~ ~ ~ ~ Notes: (1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads (2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL RMB2S RMB4S UNIT Device marking code 2R 4R Maximum repetitive peak reverse voltage VRRM 200 400 V Maximum RMS voltage VRMS 140 280 V Maximum DC blocking voltage VDC 200 400 V Maximum average forward output rectified current at TA = 30 °C on glass-epoxy P.C.B. on aluminum substrate IF(AV) 0.5 (1) 0.8 (2) A Peak forward surge current 8.3 msec single half sine-wave superimposed on rated load IFSM 30 A Rating for fusing (t < 8.3 ms) I2t5.0 A2s Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C |
Аналогичный номер детали - RMB2S |
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Аналогичное описание - RMB2S |
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