IRFPC50 datasheet(2/8 Pages) VISHAY

2 / 8 page

www.vishay.com

Document Number: 91243

S-81369-Rev. A, 07-Jul-08

IRFPC50, SiHFPC50

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 µs; duty cycle ≤ 2 %.

THERMAL RESISTANCE

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

°C/W

Case-to-Sink, Flat, Greased Surface

RthCS

-0.24

Maximum Junction-to-Case (Drain)

RthJC

0.65

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

600

VDS Temperature Coefficient

ΔV

DS/TJ

Reference to 25 °C, ID = 1 mA

0.78

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 600 V, VGS = 0 V

100

µA

VDS = 480 V, VGS = 0 V, TJ = 125 °C

500

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 6.0 Ab

0.60

Forward Transconductance

gfs

VDS = 100 V, ID = 6.0 Ab

5.7

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

2700

Output Capacitance

Coss

300

Reverse Transfer Capacitance

Crss

-61

Total Gate Charge

VGS = 10 V

ID = 11 A, VDS = 360 V

see fig. 6 and 13b

140

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 300 V, ID = 11 A,

RG = 6.2 Ω, RD = 30 Ω, see fig. 10b

-18

Rise Time

-37

Turn-Off Delay Time

td(off)

-88

Fall Time

-36

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-5.0

Internal Source Inductance

-13

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 11 A, VGS = 0 Vb

1.4

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 11 A, dI/dt = 100 A/µsb

550

830

Body Diode Reverse Recovery Charge

Qrr

-3.9

5.9

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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