Document Number: 91243

www.vishay.com

S-81369-Rev. A, 07-Jul-08

1

Power MOSFET

IRFPC50, SiHFPC50

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because of its isolated mounting

hole. It also provides greater creepage distance between

pins to meet the requirements of most safety specifications.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

600

0.60

140

20

69

Configuration

Single

N-Channel MOSFET

G

D

S

TO-247

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

TO-247

Lead (Pb)-free

IRFPC50PbF

SiHFPC50-E3

SnPb

IRFPC50

SiHFPC50

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

± 20

Continuous Drain Current

11

A

7.0

44

Linear Derating Factor

1.4

W/°C

920

mJ

10

A

18

mJ

Maximum Power Dissipation

180

W

dV/dt

3.0

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply