IRF830AS datasheet(1/8 Pages) VISHAY

номер детали	IRF830AS

подробное описание детали	Power MOSFET

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Document Number: 91062

www.vishay.com

S-81352-Rev. A, 16-Jun-08

1

Power MOSFET

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL

Vishay Siliconix

FEATURES

• Low Gate Charge Qg Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

and Current

• Effective Coss specified

• Lead (Pb)-free Available

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High speed power switching

TYPICAL SMPS TOPOLOGIES

• Two Transistor Forward

• Half Bridge and Full Bridge

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting TJ = 25 °C, L = 18 mH, RG = 25 Ω, IAS = 5.0 A (see fig. 12).

c. ISD ≤ 5.0 A, dI/dt ≤ 370 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

e. Uses SiHF830A data and test conditions.

PRODUCT SUMMARY

VDS (V)

500

RDS(on) (Max.) (Ω)VGS = 10 V

1.40

Qg (Max.) (nC)

24

Qgs (nC)

6.3

Qgd (nC)

11

Configuration

Single

N-Channel MOSFET

G

D

S

D2PAK

(TO-263)

G

D

S

I2PAK

(TO-262)

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

D2PAK (TO-263)

I2PAK (TO-262)

Lead (Pb)-free

IRF830ASPbF

IRF830ASTRLPbFa

IRF830ALPbF

SiHF830AS-E3

SiHF830ASTL-E3a

SiHF830AL-E3

SnPb

IRF830AS

IRF830ASTRLa

IRF830AL

SiHF830AS

SiHF830ASTLa

SiHF830AL

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

500

V

Gate-Source Voltage

VGS

± 30

Continuous Drain Current

VGS at 10 V

TC = 25 °C

ID

5.0

A

TC = 100 °C

3.2

Pulsed Drain Currenta, e

IDM

20

Linear Derating Factor

0.59

W/°C

Single Pulse Avalanche Energyb, e

EAS

230

mJ

Avalanche Currenta

IAR

5.0

A

Repetiitive Avalanche Energya

EAR

7.4

mJ

Maximum Power Dissipation

TA = 25 °C

PD

3.1

W

TC = 25 °C

74

Peak Diode Recovery dV/dtc, e

dV/dt

5.3

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

300d

* Pb containing terminations are not RoHS compliant, exemptions may apply

Аналогичный номер детали - IRF830AS

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRF830AS	155Kb / 10P	Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A)
Vishay Siliconix	IRF830AS	242Kb / 10P	Power MOSFET 30-Aug-2021
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Vishay Siliconix	IRF830ASPBF	242Kb / 10P	Power MOSFET 30-Aug-2021
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