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Document Number: 91062

6

S-81352-Rev. A, 16-Jun-08

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL

Vishay Siliconix

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Fig. 13a - Maximum Avalanche Energy vs. Drain Current

Fig. 12d - Basic Gate Charge Waveform

Fig. 13b - Gate Charge Test Circuit

25

50

75

100

125

150

0

100

200

300

400

500

Starting T , Junction Temperature ( C)

J

°

ID

TOP

BOTTOM

2.2A

3.2A

5.0A

Q

GS

Q

GD

Q

G

Charge

V

GS

770

775

7 8 0

7 8 5

790

0.0

1 . 0

2.0

3 . 0

4 . 0

5 . 0

A

a v

I

, A v alanc he C urrent (A )

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 k

Ω

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-