W8NC90Z datasheet(1/8 Pages) STMICROELECTRONICS

номер детали	W8NC90Z

подробное описание детали	N-CHANNEL 900V - 1.1 ohm - 7.6A TO-247 Zener-Protected PowerMESH™ II MOSFET

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July 2000

STW8NC90Z

N-CHANNEL 900V - 1.1

Ω - 7.6A TO-247

Zener-Protected PowerMESH™III MOSFET

s

TYPICAL RDS(on) = 1.1 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY GATE-

TO-SOURCE ZENER DIODES

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsur-

passed on-resistance per unit area while integrating

back-to-back Zener diodes between gate and

source. Such arrangement gives extra ESD capabil-

ity with higher ruggedness performance as request-

ed by a large variety of single-switch applications.

APPLICATIONS

s

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

s

WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

(1)ISD ≤7.6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*)Limited only by maximum temperature allowed

TYPE

VDSS

RDS(on)

ID

STW8NC90Z

900 V

< 1.38

Ω

7.6 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

900

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

900

V

VGS

Gate- source Voltage

±25

V

ID

Drain Current (continuos) at TC = 25°C

7.6

A

ID

Drain Current (continuos) at TC = 100°C

4.8

A

IDM (q)

Drain Current (pulsed)

30

A

PTOT

Total Dissipation at TC = 25°C

190

W

Derating Factor

1.51

W/°C

IGS

Gate-source Current (*)

±50

mA

VESD(G-S)

Gate source ESD(HBM-C=100pF, R=15K

Ω)

4KV

dv/dt (1)

Peak Diode Recovery voltage slope

3

V/ns

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

TO-247

Аналогичный номер детали - W8NC90Z

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	W8NB100	50Kb / 5P	N - CHANNEL 1000V - 1.2ohm- 8A - TO-247 PowerMESH MOSFET Mar-1999
STMicroelectronics	W8NB80	50Kb / 5P	N - CHANNEL 800V - 1.2ohm - 7.5A - TO-247 PowerMESH MOSFET Jan-1999

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Аналогичное описание - W8NC90Z

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STU8NC90Z	413Kb / 10P	N-CHANNEL 900V - 1.1ohm - 7.6A Max220/I-Max220 Zener-Protected PowerMESH?줚II MOSFET Sep-2000
	STW10NC70Z	249Kb / 8P	N-CHANNEL 700V - 0.58 ohm - 10.6A TO-247 Zener-Protected PowerMESH?줚II MOSFET Sep-2000
	STW5NB90	85Kb / 8P	N - CHANNEL 900V - 2.3ohm - 5.6A - TO-247 PowerMESH MOSFET Mar-1999
	STW6NC90Z	243Kb / 8P	N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH™ III MOSFET Oct-2000
	STW7NC90Z	243Kb / 8P	N-CHANNEL 900V - 1.55ohm - 6A TO-247 Zener-Protected PowerMESH™ III MOSFET May-2001
	STW8NB90	311Kb / 9P	N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh™ MOSFET Jul-2001
	STW8NC70Z	240Kb / 8P	N-CHANNEL 700V - 1.1 ohm - 7A TO-247 Zener-Protected PowerMESH™ II MOSFET May-2001
	STW8NC80Z	263Kb / 8P	N-CHANNEL 700V - 1.1 ohm - 7A TO-247 Zener-Protected PowerMESH™ II MOSFET Dec-2001
	STW9NC70Z	248Kb / 8P	N-CHANNEL 700V - 0.90 ohm - 7.5A TO-247 Zener-Protected PowerMESH™ II MOSFET Mar-2001
	STW12NK90Z	267Kb / 14P	N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET 17-Oct-2006

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