DESCRIPTION
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capability with higher ruggedness performance as request ed by a large variety of single-switch applications.

■ TYPICAL RDS(on) = 2.1Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ GATE-TO-SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT