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STH18NB40 датащи(PDF) 3 Page - STMicroelectronics

номер детали STH18NB40
подробное описание детали  N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET
PDF  7 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STH18NB40 датащи(HTML) 3 Page - STMicroelectronics

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STW18NB40/STH18NB40FI
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
Rise Time
VDD = 200 V, ID = 9.2 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
27
ns
tr
14
ns
Qg
Total Gate Charge
VDD = 320V, ID = 18.4 A,
VGS = 10V
60
84
nC
Qgs
Gate-Source Charge
16
nC
Qgd
Gate-Drain Charge
28.3
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 320V, ID = 18.4 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
13
ns
tf
Fall Time
15
ns
tc
Cross-over Time
27
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
18.4
A
ISDM (2)
Source-drain Current (pulsed)
73.6
A
VSD (1)
Forward On Voltage
ISD = 18.4 A, VGS = 0
1.6
V
trr
Reverse Recovery Time
ISD = 18.4 A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
480
ns
Qrr
Reverse Recovery Charge
5.5
µC
IRRM
Reverse Recovery Current
23
A



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