STH18NB40 datasheet(1/7 Pages) STMICROELECTRONICS

номер детали	STH18NB40

подробное описание детали	N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET

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производитель	STMICROELECTRONICS [STMicroelectronics]

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PRELIMINARY DATA

June 2002

STW18NB40

STH18NB40FI

N-CHANNEL 400V - 0.19

Ω - 18.4 A TO-247/ISOWATT218

PowerMesh™ MOSFET

(1)ISD<18.4A, di/dt<200A/µ, VDD<V(BR)DSS,TJ<TJMAX

INTERNAL SCHEMATIC DIAGRAM

s

TYPICAL RDS(on) = 0.19 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprieraty edge termi-

nation structure, gives the lowest RDS(on) per area,

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STW18NB40

STH18NB40FI

400 V

< 0.26

Ω

< 0.26

Ω

18.4 A

12.4 A

Symbol

Parameter

Value

Unit

STW18NB40

STH18NB40FI

VDS

Drain-source Voltage (VGS = 0)

400

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

400

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuos) at TC = 25°C

18.4

12.4

A

ID

Drain Current (continuos) at TC = 100°C

11.6

7.8

A

IDM (l)

Drain Current (pulsed)

73.6

A

PTOT

Total Dissipation at TC = 25°C

190

80

W

Derating Factor

1.52

0.64

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

4.5

V/ns

VISO

Insulation Withstand Voltage (DC)

-

2000

V

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

TO-247

ISOWATT218

1

2

3

1

2

3

Аналогичный номер детали - STH18NB40

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Inchange Semiconductor ...	STH18NB40FI	344Kb / 2P	isc N-Channel MOSFET Transistor

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Аналогичное описание - STH18NB40

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STU9NB80	82Kb / 8P	N-CHANNEL 800V - 0.85ohm - 9.3A - TO-247 PowerMESH MOSFET Jul-1999
	STW10NC60	337Kb / 9P	N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET Feb-2002
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	STW15NB50	110Kb / 9P	N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET Jun-1998
	STW16NA40	73Kb / 6P	N - CHANNEL 400V - 0.21ohm - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS Oct-1998
	STW20NC50	249Kb / 8P	N-CHANNEL 500V - 0.22ohm - 18.4A TO-247 PowerMesh™ I MOSFET May-2001
	STW50NB20	88Kb / 8P	N - CHANNEL 200V - 0.047ohm - 50A - TO-247 PowerMESH MOSFET Oct-1999
	STW5NB90	85Kb / 8P	N - CHANNEL 900V - 2.3ohm - 5.6A - TO-247 PowerMESH MOSFET Mar-1999
	STW6NB90	51Kb / 5P	N - CHANNEL 900V - 1.7ohm - 6.3A - TO-247 PowerMESH MOSFET Feb-1999
	STW8NB90	311Kb / 9P	N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh™ MOSFET Jul-2001

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