BCR5KM datasheet(3/11 Pages) RENESAS

3 / 11 page

Mar. 2002

✽2. Measurement using the gate trigger characteristics measurement circuit.

✽3. High sensitivity (IGT

≤ 10mA) is also available. (IGT item ➀)

✽4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5

°C/W.

IDRM

VTM

VFGT !

VRGT !

VRGT #

IFGT !

IRGT !

IRGT #

VGD

Rth (j-c)

Rth (j-a)

Tj=125

°C, VDRM applied

Tc=25

°C, ITM=7A, Instantaneous measurement

Tj=25

°C, VD=6V, RL=6Ω, RG=330Ω

Tj=25

°C, VD=6V, RL=6Ω, RG=330Ω

Tj=125

°C, VD=1/2VDRM

Junction to case ✽4

Junction to ambient

Unit

Repetitive peak off-state current

On-state voltage

Gate trigger voltage ✽2

Gate trigger current ✽2

Gate non-trigger voltage

Thermal resistance

Limits

Max.

2.0

1.5

15 ✽3

—

3.8

Typ.

—

Min.

—

0.2

—

°C/W

Symbol

Parameter

Test conditions

ELECTRICAL CHARACTERISTICS

MITSUBISHI SEMICONDUCTOR

〈TRIAC〉

BCR5KM

MEDIUM POWER USE

INSULATED TYPE, PLANAR PASSIVATION TYPE

PERFORMANCE CURVES

Refer to the page 6 as to the product guaranteed

maximum junction temperature 150

°C

3.8

0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4

102

101

100

10–1

Tj = 25

°C

100

5 7 101

5 7 102

100

MAXIMUM ON-STATE

CHARACTERISTICS

ON-STATE VOLTAGE (V)

RATED SURGE ON-STATE

CURRENT

CONDUCTION TIME

(CYCLES AT 60Hz)

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