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BCR5KM датащи(PDF) 4 Page - Renesas Technology Corp

номер детали BCR5KM
подробное описание детали  MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
PDF  11 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

BCR5KM датащи(HTML) 4 Page - Renesas Technology Corp

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Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR5KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
°C
101
103
7
5
3
2
–60
–20
20
102
7
5
3
2
60
100
140
4
4
–40
0
40
80
120
10–1
100
2
3
5
7
101
2
3
5
7
102
2
3
5
7
101 2
102
35 7
2
103
35 7
2
104
35 7
VGT = 1.5V
IGM = 2A
PGM = 3W
PGM = 0.3W
IGT = 15mA
Tj = 25
°C
VGD = 0.2V
VGM = 10V
101
103
7
5
3
2
–60
–20
20
102
7
5
3
2
60
100
140
4
4
–40
0
40
80
120
IRGT III
101
103
7
5
3
2
–60
–20
20
102
7
5
3
2
60
100
140
4
4
–40
0
40
80
120
102 2
103
35 7
2
104
35 7
2
105
35 7
100
101
2
3
4
5
7
102
2
3
4
5
7
0
0.5
1.0
1.5
2.0
4.0
2.5
3.0
3.5
10–1 2
100
35 7
2
101
35 7
2
102
35 7
23
102
57 103 23 5 7
0
2
4
6
8
10
9
7
5
3
1
0123456789
10
IRGT I
IFGT I
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
CONDUCTION TIME
(CYCLES AT 60Hz)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE CHARACTERISTICS
(
Ι, ΙΙ AND ΙΙΙ)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
MAXIMUM ON-STATE POWER
DISSIPATION
RMS ON-STATE CURRENT (A)
10
360
°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
TYPICAL EXAMPLE
TYPICAL EXAMPLE



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