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HSG2001 датащи(PDF) 3 Page - Renesas Technology Corp

номер детали HSG2001
подробное описание детали  SiGe NPN Epitaxial High Frequency Medium Power Amplifier
PDF  25 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HSG2001 датащи(HTML) 3 Page - Renesas Technology Corp

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HSG2001
Rev.2.00, Apr.20.2004, page 3 of 24
Main Characteristics
100
80
60
40
20
12
3
4
5
50
40
30
20
10
0
0.2
0.4
0.6
0.8
1.0
250
100
0
1
10
100
VCE = 2 V
0
Collector to Emitter Voltage
VCE (V)
Typical Output Characteristics
Base to Emitter Voltage
VBE (V)
Typical Transfer Characteristics
Collector Current
IC (mA)
DC Current Transfer Ratio vs.
Collector Current
550
µA
450
µA
350
µA
250
µA
150
µA
IB = 50
µA
150
200
50
VCE = 2 V
0
50
100
150
200
Collector Power Dissipation Curve
Ambient Temperature
Ta (°C)
500
400
300
200
100
*FR – 4(2 x 2 x 1mm)
on PCB
0.8
0.6
0.4
0.2
0
123
4
IE = 0
f = 1 MHz
1.0
Collector to Base Voltage
VCB (V)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
1.0
0.5
0
123
4
IE = 0
f = 1 MHz
1.5
Collector to Base Voltage
VCB (V)
Collector Output Capacitance vs.
Collector to Base Voltage



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