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HSG2001 датащи(PDF) 4 Page - Renesas Technology Corp

номер детали HSG2001
подробное описание детали  SiGe NPN Epitaxial High Frequency Medium Power Amplifier
PDF  25 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HSG2001 датащи(HTML) 4 Page - Renesas Technology Corp

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HSG2001
Rev.2.00, Apr.20.2004, page 4 of 24
-20
0
20
3rd. Order Intercept Point (IP3)
Input Power
Pin (dBm)
-30
10
-50
-20
0
20
30
0
20406080
100
0
5
10
15
20
25
Collector Current
IC (mA)
Maximum Available Gain, Maximum Stable Gain
vs. Collector Current
VCE = 3 V
f = 1GHz
1.8 GHz
VCE = 3 V
Icq = 40 mA
f = 1.8GHz
-40
2.5
2.0
1.5
1.0
0.5
0
15
510
20
25
35
VCE = 3 V
Collector Current
IC (mA)
Noise Figure vs. Collector Current
IMD3
(2tone:
∆f=1MHz)
-30
-10
10
-40
-10
2.4GHz
2GHz
3GHz
4GHz
f = 2.4 GHz
f = 1.8 GHz
25
20
15
10
5
0
1
2
5
10
20
50
100
f = 1 GHz
VCE = 3 V
2 V
1 V
Collector Current
IC (mA)
Transition Frequency vs.
Collector Current
50
40
30
20
10
0
0.1
0.2
0.5
1
2
5
10
VCE = 3 V
IC = 40 mA
MAG
MSG
Frequency
f (GHz)
S21 Parameter, Maximum Available Gain,
Maximum Stable Gain vs. Frequency
|S21|2
Fundamental
(1tone)
30



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