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HAF1002 датащи(PDF) 3 Page - Renesas Technology Corp

номер детали HAF1002
подробное описание детали  Silicon P Channel MOS FET Series Power Switching
PDF  9 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAF1002 датащи(HTML) 3 Page - Renesas Technology Corp

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HAF1002(L), HAF1002(S)
Rev.2.00 Sep 07, 2005 page 3 of 8
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
ID1
–7
A
VGS = –3.5 V, VDS = –2 V
Drain current
ID2
–10
mA
VGS = –1.2 V, VDS = –2 V
Drain to source breakdown voltage
V (BR) DSS
–60
V
ID = –10 mA, VGS = 0
V (BR) GSS
–16
V
IG = –100
µA, VDS = 0
Gate to source breakdown voltage
V (BR) GSS
3
V
IG = 100
µA, VDS = 0
IGSS1
–100
µA
VGS = –8 V, VDS = 0
IGSS2
–50
µA
VGS = –3.5 V, VDS = 0
IGSS3
–1
µA
VGS = –1.2 V, VDS = 0
Gate to source leak current
IGSS4
100
µA
VGS = 2.4 V, VDS = 0
IGS (op) 1
–0.8
mA
VGS = –8 V, VDS = 0
Input current (shut down)
IGS (op) 2
–0.35
mA
VGS = –3.5 V, VDS = 0
Zero gate voltage drain current
IDSS
–250
µA
VDS = –50 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
–1.1
–2.25
V
ID = –1 mA, VDS = –10 V
RDS (on)
100
130
m
ID = –7.5 A, VGS = –4 V
Note 3
Static drain to source on state resistance
RDS (on)
70
90
m
ID = –7.5 A, VGS = –10 V
Note 3
Forward transfer admittance
|yfs|
5
10
S
ID = –7.5 A, VDS = –10 V
Note 3
Output capacitance
Coss
610
pF
VDS = –10 V, VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
7.5
µs
Rise time
tr
36
µs
Turn-off delay time
td (off)
32
µs
Fall time
tf
29
µs
ID = –7.5 A
VGS = –5 V
RL = 4
Body-drain diode forward voltage
VDF
–1.0
V
IF = –15 A, VGS = 0
Body-drain diode reverse recovery time
trr
200
ns
IF = –15 A, VGS = 0
diF/dt = 50 A/
µs
tos1
3.7
ms
VGS = –5 V, VDD = –12 V
Over load shut down operation time
Note4
tos2
1
ms
VGS = –5 V, VDD = –24 V
Notes: 3. Pulse test
4. Include the time shift based on increasing of channel temperature when operate under over load condition.



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