HAF1002 datasheet(4/9 Pages) RENESAS

номер детали	HAF1002

подробное описание детали	Silicon P Channel MOS FET Series Power Switching

PDF	9 Pages

Scroll/Zoom	100%

производитель	RENESAS [Renesas Technology Corp]

домашняя страница	http://www.renesas.com

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4 / 9 page

HAF1002(L), HAF1002(S)

Rev.2.00 Sep 07, 2005 page 4 of 8

Main Characteristics

100

150

200

–500

–100

–200

–20

–50

–10

–2

–5

–1

–0.5

–0.3

–0.3 –0.5 –1

–2

–5 –10 –20

–50 –100

–50

–40

–30

–20

–10

–2

–4–6–8

–10

–10 V

VGS = –3 V

–3.5 V

–1

–2

–3

–4

–5

Tc = –25

°C

Ta = 25

°C

µs

100

µs

1 ms

Operation

(Tc

°C)

Operation in this area

is limited by RDS (on)

Thermal shut down

Operation area

–20

–16

–12

–8

–4

–8 V

–6 V

–5 V

–4 V

VDS = –10 V

Pulse Test

Case Temperature

Tc (

°C)

Power vs. Temperature Derating

Drain to Source Voltage VDS (V)

Maximum Safe Operation Area

Drain to Source Voltage

VDS (V)

Typical Output Characteristics

Pulse Test

Gate to Source Voltage

VGS (V)

Typical Transfer Characteristics

–2.0

–1.6

–1.2

–0.8

–0.4

–2

–4

–6

–8

–10

0.5

–0.1 –0.2 –0.5 –1 –2

–5 –10 –20

0.2

0.1

0.02

0.05

0.01

–5 A

ID = –10 A

–2 A

–50

Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Pulse Test

Drain Current

ID (A)

Static Drain to Source on State Resistance

vs. Drain Current

Pulse Test

VGS = –4 V

–10 V

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