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RJK0366DSP датащи(PDF) 3 Page - Renesas Technology Corp

номер детали RJK0366DSP
подробное описание детали  Silicon N Channel Power MOS FET Power Switching
PDF  7 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
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RJK0366DSP датащи(HTML) 3 Page - Renesas Technology Corp

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RJK0366DSP
REJ03G1657-0301 Rev.3.01 Apr 24, 2008
Page 3 of 6
Main Characteristics
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
Drain Current
ID
(A)
Static Drain to Source on State Resistance
vs. Drain Current
20
16
12
8
4
0
2
468
10
20
16
12
8
4
0
12
3
4
5
Tc = 75
°C
25
°C
–25
°C
VDS = 10 V
Pulse Test
VGS = 2.6 V
Pulse Test
10
3
1
30
300
1
10
100
1000
3
200
150
100
50
0
4
8
12
16
20
Pulse Test
ID = 10 A
5 A
100
30
VGS = 4.5 V
10 V
2.8 V
3.0 V
10 V
3.2 V
4.5 V
Pulse Test
2 A
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
4.0
3.0
2.0
1.0
0
50
100
150
200
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW
≤ 10 s
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Note 5 : When using the glass epoxy board
(FR4 40x40x1.6 mm)
100
10
1
0.1
0.01
0.1
0.3
1
3
10
30
100
500
Ta = 25 °C
1 shot Pulse
PW
= 10
ms
10
µs
100
µs
Operation in
this area is
limited by R
DS(on)
Note
5
DC
Operation
(PW
≤ 10
s)
1 ms



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