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RJK0366DSP датащи(PDF) 4 Page - Renesas Technology Corp

номер детали RJK0366DSP
подробное описание детали  Silicon N Channel Power MOS FET Power Switching
PDF  7 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK0366DSP датащи(HTML) 4 Page - Renesas Technology Corp

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RJK0366DSP
REJ03G1657-0301 Rev.3.01 Apr 24, 2008
Page 4 of 6
Case Temperature
Tc
(°C)
Static Drain to Source on State Resistance
vs. Temperature
25
20
15
10
5
–25
0
25
50
75
100 125
150
0
ID = 2 A, 5 A, 10 A
VGS = 4.5 V
10 V
Pulse Test
2 A, 5 A, 10 A
Channel Temperature Tch (
°C)
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
16
12
8
4
25
50
75
100
125
150
0
IAP = 11 A
VDD = 15 V
duty < 0.1 %
Rg
≥ 50 Ω
Source to Drain Voltage VSD (V)
Reverse Drain Current vs.
Source to Drain Voltage
20
16
12
8
4
0
0.4
0.8
1.2
1.6
2.0
Pulse Test
5 V
VGS = 0, –5 V
10 V
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
010
30
20
10000
3000
1000
300
100
30
10
VGS = 0
f = 1 MHz
Crss
Coss
Ciss
Gate Charge
Qg (nc)
Dynamic Input Characteristics
50
40
30
20
10
0
20
16
12
8
4
10
20
30
40
50
0
0
ID = 11 A V
GS
VDS
VDD = 25 V
10 V
VDD = 25 V
10 V



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