STP180N55F3 datasheet(4/14 Pages) STMICROELECTRONICS

номер детали	STP180N55F3

подробное описание детали	N-channel 55V - 3.2m廓 - 120A - D2PAK/TO-220 STripFET??Power MOSFET

PDF	14 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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4 / 14 page

Electrical characteristics

STB180N55F3 - STP180N55F3

4/14

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS= max rating,

VDS= max rating,@125°C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

200

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 60A

D²PAK

TO-220

2.9

3.2

3.5

3.8

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

Forward

transconductance

VDS = 15V , ID = 60A

150

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1MHz,

VGS = 0

6800

1450

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 27.5V, ID = 60A

RG =4.7Ω VGS = 10V

(see Figure 12,

Figure 17)

150

110

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 44V, ID = 120A,

VGS = 10V,

(see Figure 13)

100

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