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STP180N55F3 датащи(PDF) 3 Page - STMicroelectronics

номер детали STP180N55F3
подробное описание детали  N-channel 55V - 3.2m廓 - 120A - D2PAK/TO-220 STripFET??Power MOSFET
PDF  14 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STP180N55F3 датащи(HTML) 3 Page - STMicroelectronics

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STB180N55F3 - STP180N55F3
Electrical ratings
3/14
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS=0)
55
V
VGS
Gate-source voltage
± 20
V
ID
(1)
1.
Current limited by package.
Drain current (continuous) at TC = 25°C
120
A
ID
(1)
Drain current (continuous) at TC=100°C
120
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
480
A
PTOT
Total dissipation at TC = 25°C
330
W
Derating factor
2.2
W/°C
dv/dt (3)
3.
ISD < 120A, di/dt < 900A/µs, VDD < V(BR)DSS, TJ < TJMAX
Peak diode recovery voltage slope
11
V/ns
EAS
(4)
4.
Starting Tj=25°C, Id=60A, Vdd=40V (see Figure 15 and Figure 16)
Single pulse avalanche energy
1000
mJ
Tj
Tstg
Operating junction temperature
storage temperature
-55 To 175
°C
Table 2.
Thermal data
Symbol
Parameter
TO-220
D²PAK
Unit
Rthj-case
Thermal resistance junction-case
0.45
°C/W
Rthj-a
Thermal resistance junction-ambient
max
62.5
--
°C/W
Rthj-pcb(1)
1.
When mounted on FR-4 board, on 1inch², 2oz Cu.
Thermal resistance junction-ambient
max
--
50
°C/W
Tl
Maximum lead temperature for
soldering purpose
300
°C



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