CYRF7936
Document #: 001-48013 Rev. **
Page 13 of 21
Absolute Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature .................................. –65°C to +150°C
Ambient Temperature with Power Applied.. –55°C to +125°C
Supply Voltage on any power supply pin
relative to VSS.................................................–0.3V to +3.9V
DC Voltage to Logic Inputs[8]................... –0.3V to VIO +0.3V
DC Voltage applied to Outputs
in High-Z State......................................... –0.3V to VIO +0.3V
Static Discharge Voltage (Digital)[9] ........................... >2000V
Static Discharge Voltage (RF)[9] ................................. 1100V
Latch-Up Current .....................................+200 mA, –200 mA
Operating Conditions
VCC.....................................................................2.4V to 3.6V
VIO ......................................................................1.8V to 3.6V
VBAT....................................................................1.8V to 3.6V
TA (Ambient Temperature Under Bias) ............. 0°C to +70°C
Ground Voltage.................................................................. 0V
FOSC (Crystal Frequency)............................ 12MHz ±30 ppm
Notes
8. It is permissible to connect voltages above VIO to inputs through a series resistor limiting input current to 1 mA. AC timing not guaranteed.
9. Human Body Model (HBM).
10. VREG depends on battery input voltage.
11. In sleep mode, the IO interface voltage reference is VBAT.
12. In sleep mode, VCC min. can be as low as 1.8V.
13. Includes current drawn while starting crystal, starting synthesizer, transmitting packet (including SOP and CRC16), changing to receive mode, and receiving ACK
handshake. Device is in sleep except during this transaction.
14. ISB is not guaranteed if any IO pin is connected to voltages higher than VIO.
DC Characteristics
(T = 25
°C, VBAT = 2.4V, PMU disabled, fOSC = 12.000000 MHz)
Parameter
Description
Conditions
Min
Typ
Max
Unit
VBAT
Battery Voltage
0–70
°C1.8
3.6
V
VREG[10]
PMU Output Voltage
2.4V mode
2.4
2.43
V
VREG[10]
PMU Output Voltage
2.7V mode
2.7
2.73
V
VIO[11]
VIO Voltage
1.8
3.6
V
VCC
VCC Voltage
0–70
°C2.4[12]
3.6
V
VOH1
Output High Voltage Condition 1
At IOH = –100.0 µA
VIO – 0.2
VIO
V
VOH2
Output High Voltage Condition 2
At IOH = –2.0 mA
VIO – 0.4
VIO
V
VOL
Output Low Voltage
At IOL = 2.0 mA
0
0.45
V
VIH
Input High Voltage
0.7VIO
VIO
V
VIL
Input Low Voltage
0
0.3VIO
V
IIL
Input Leakage Current
0 < VIN < VIO
–1
0.26
+1
µA
CIN
Pin Input Capacitance
except XTAL, RFN, RFP, RFBIAS
3.510pF
ICC (GFSK)[13]
Average TX ICC, 1 Mbps, slow channel PA = 5, 2 way, 4 bytes/10 ms
0.87
mA
ICC (32-8DR)[13] Average TX ICC, 250 kbps, fast channel PA = 5, 2 way, 4 bytes/10 ms
1.2
mA
ISB[14]
Sleep Mode ICC
0.8
10
µA
ISB[14]
Sleep Mode ICC
PMU enabled
31.4
µA
IDLE ICC
Radio off, XTAL Active
XOUT disabled
1.0
mA
Isynth
ICC during Synth Start
8.4
mA
TX ICC
ICC during Transmit
PA = 5 (–5 dBm)
20.8
mA
TX ICC
ICC during Transmit
PA = 6 (0 dBm)
26.2
mA
TX ICC
ICC during Transmit
PA = 7 (+4 dBm)
34.1
mA
RX ICC
ICC during Receive
LNA off, ATT on
18.4
mA
RX ICC
ICC during Receive
LNA on, ATT off
21.2
mA
Boost Eff
PMU Boost Converter Efficiency
VBAT = 2.5V, VREG = 2.73V,
ILOAD = 20 mA
81
%
ILOAD_EXT
Average PMU External Load current
VBAT = 1.8V, VREG = 2.73V,
0–50
°C, RX Mode
15
mA
ILOAD_EXT
Average PMU External Load current
VBAT = 1.8V, VREG = 2.73V, 50–70°C,
RX Mode
10
mA
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