MRF284 datasheet(2/12 Pages) FREESCALE

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RF Device Data

Freescale Semiconductor

MRF284LR1 MRF284LSR1

Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 150 μAdc)

VGS(th)

2.0

3.0

4.0

Vdc

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 200 mAdc)

VGS(q)

3.0

4.0

5.0

Vdc

Drain-Source On-Voltage

(VGS = 10 Vdc, ID = 1.0 Adc)

VDS(on)

—

0.3

0.6

Vdc

Forward Transconductance

(VDS = 10 Vdc, ID = 1.0 Adc)

gfs

—

1.5

—

Dynamic Characteristics

Input Capacitance

(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)

Ciss

—

Output Capacitance

(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)

Coss

—

Reverse Transfer Capacitance

(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)

Crss

—

1.4

—

Functional Tests (in Freescale Test Fixture, 50 ohm system)

Common-Source Power Gain

(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

Gps

10.5

—

Drain Efficiency

(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

—

Intermodulation Distortion

(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

IMD

—

-32

-29

dBc

Input Return Loss

(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

IRL

—

-15

-9

Common-Source Amplifier Power Gain

(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

Gps

10.4

—

Drain Efficiency

(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

—

Intermodulation Distortion

(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

IMD

—

-34

—

dBc

Input Return Loss

(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

IRL

—

-15

-9

Common-Source Amplifier Power Gain

(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,

f1 = 2000.0 MHz)

Gps

8.5

9.5

—

Drain Efficiency

(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,

f1 = 2000.0 MHz)

—

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