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MRF284 датащи(PDF) 8 Page - Freescale Semiconductor, Inc

номер детали MRF284
подробное описание детали  RF Power Field Effect Transistors
PDF  12 Pages
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производитель  FREESCALE [Freescale Semiconductor, Inc]
домашняя страница  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRF284 датащи(HTML) 8 Page - Freescale Semiconductor, Inc

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RF Device Data
Freescale Semiconductor
MRF284LR1 MRF284LSR1
TYPICAL CHARACTERISTICS
Figure 10. DC Safe Operating Area
VDD, DRAIN SUPPLY VOLTAGE (Vdc)
Figure 11. Capacitance versus
Drain Source Voltage
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
28
12
20
4
0
100
10
1
Figure 12. Class A Third Order Intercept Point
Pin, INPUT POWER (dBm)
60
40
30
20
10
0
60
40
20
0
−20
−80
24
Crss
16
8
FUNDAMENTAL
3rd Order
Coss
50
35
25
15
545
55
50
30
10
−10
−30
−40
−60
−50
−70
1
0
28
24
20
16
12
8
4
0
Tflange = 75°C
Tflange = 100°C
TJ = 175°C
3
2
Ciss
−90
VDD = 26 Vdc
IDQ = 1.8 Adc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
1.0
Figure 13. 1920-2000 MHz Broadband Circuit Performance
f, FREQUENCY (MHz)
1920
11
10
9
8
7
6
5
4
3
1940
1960
1980
2000
VDD = 26 Vdc
Pout = 30 W (PEP), IDQ = 200 mA
Two−Tone
Frequency Delta = 100 kHz
Gps
η
IMD
VSWR
45
−32
−40
40
30
−36
2.0
3.0
35
TJ, JUNCTION TEMPERATURE (°C)
250
200
150
100
50
0
1.E+10
1.E+09
1.E+07
1.E+06
1.E+05
This graph displays calculated MTTF in hours x ampere2 drain current.
Life tests at elevated temperature have correlated to better than
±10%
of the theoretical prediction for metal failure. Divide MTTF factor by ID2
for MTTF in a particular application.
1.E+08
1.E+04
Figure 14. MTTF Factor versus Junction Temperature



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