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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PM6685TR датащи(PDF) 27 Page - STMicroelectronics |
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PM6685TR датащи(HTML) 27 Page - STMicroelectronics |
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27 / 52 page  PM6685 Device description 27/52 Figure 34. Current waveforms in current limit conditions Being fixed the valley threshold, the greater the current ripple is, greater the DC output current is The valley current limit can be set with resistor RCSENSE: Equation 6 Where ICSENSE = 100uA, RDSon is the drain-source on resistance of the low side switch. Consider the temperature effect and the worst case value in RDSon calculation. The accuracy of the valley current threshold detection depends on the offset of the internal comparator ( ∆V OFF) and on the accuracy of the current generator(∆ICSENSE): Equation 7 Where RSNS is the sensing element (RDSon). PM6685 provides also a fixed negative peak current limit to prevent an excessive reverse inductor current when the switching section sinks current from the load in PWM mode. This negative current limit threshold is measured between PHASE and SGND pins, comparing the magnitude drop on the PHASE node during the conduction time of the low side MOSFET with an internal fixed voltage of 120mV. If the current is sensed on the low side MOSFET, the negative valley-current limit INEG (if the device works in PWM mode) is given by: Inductor current Valley current threshold DC current limit = maximum load Current Time Maximum load current is influenced by the inductor current ripple CSENSE Lvalley DSon CSENSE I I R R × = SNS SNS CSENSE CSENSE CSENSE CSENSE OFF CSENSE CSENSE Lvalley Lvalley R R R R 100 I R V I I I I ∆ + ∆ + ⎥ ⎦ ⎤ ⎢ ⎣ ⎡ × × ∆ + ∆ = ∆ |
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