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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PM6670ASTR датащи(PDF) 46 Page - STMicroelectronics |
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PM6670ASTR датащи(HTML) 46 Page - STMicroelectronics |
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46 / 54 page  Application information PM6670AS 46/54 Tested low-side MOSFETs are listed in Table 10. Dual N-MOS can be used in applications with lower output current. Table 11 shows some suitable dual MOSFETs for applications requiring about 3 A. 8.1.5 Diode selection A rectifier across the synchronous switch is recommended. The rectifier works as a voltage clamp across the synchronous rectifier and reduces the negative inductor swing during the dead time between turning the high-side MOSFET off and the synchronous rectifier on. Moreover it increases the efficiency of the system. Choose a schottky diode as long as its forward voltage drop is very little (0.3 V). The reverse voltage should be greater than the maximum input voltage VINmax and a minimum recovery reverse charge is preferable. Table 12 shows some evaluated diodes. Table 10. Evaluated low-side MOSFETs Manufacturer Type RDSon (mΩ) CGD \ CGS Rated reverse voltage (V) ST STS12NH3LL 13.5 0.069 30 ST STS25NH3LL 4.0 0.011 30 IR IRF7811 24 0.054 30 Table 11. Suitable dual MOSFETs Manufacturer Type RDSon (mΩ) Gate charge (nC) Rated reverse voltage (V) ST STS8DNH3LL 25 10 30 IR IRF7313 46 33 30 Table 12. Evaluated recirculation rectifiers Manufacturer Type Forward voltage (V) Rated reverse voltage (V) Reverse current ( µA) ST STPS1L30M 0.34 30 0.00039 ST STPS1L30A 0.34 30 0.00039 |
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